The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1987
Filed:
Jan. 26, 1982
Kenichi Kikuchi, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
This invention is concerned with an improved Schottky-barrier gate field effect transistor, which comprises a semi-insulating semiconductor substrate, an active layer formed on the surface of the semiconductor substrate and a source electrode, Schottky-barrier gate electrode and drain electrode formed on the active layer, in which the active layer has a first part having such a thickness as to give a predetermined pinch-off voltage and being formed near the gate electrode and a second part having a substantially similar carrier concentration to that of the first part and a larger thickness than the first part and being formed between the Schottky-barrier gate electrode and source electrode, and the upper surfaces of the first part and second part of the active layer are in a same plane.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile