The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 1987
Filed:
Jan. 12, 1985
Albert L Armstrong, Latham, NY (US);
Joel L Goodrich, Westford, MA (US);
M/A-COM, Inc., Burlington, MA (US);
Abstract
A process for the fabrication of semiconductor components and in particular a process in which the components are fabricated with a controlled spacing of etched channels. The process is in particular utilized in fabricating a monolithic array of elements such as a pin diode array. The process of the present invention combines the use of an anisotropic silicon etching process for the desired device geometries with a means of defining all device surface topology by substantially a single photomask thus eliminating critical mask alignment. A second embodiment of the invention is also described employing fewer layers of deposition with a double photomask step.