The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 1987

Filed:

Oct. 23, 1986
Applicant:
Inventors:

Hideo Monma, Kawasaki, JP;

Masato Ishiguro, Machida, JP;

Tetsuo Kawano, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 42 ; 357 41 ; 357 45 ; 357 20 ;
Abstract

A gate array is disclosed having a plurality of basic cells each comprising a transistor whose gm is as low as one fifth to one twentieth that of the transistors in a conventional gate array. The low gm is provided by reducing the W/L ratio of the gate region of the transistor. The basic cell having the transistor of the low gm is formed to replace the conventional basic cell at a specified position in a specified basic cell array. The transistor of low gm reduces the number of basic cells necessary for forming a delay circuit, and elminates the need for an external resistance component which was formerly required when a pull-up or pull-down circuit or a monostable multivibrator was formed in the gate array.


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