The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1987
Filed:
May. 20, 1986
Masaharu Nishiura, Yokosuka, JP;
Hiromu Haruki, Yokohama, JP;
Abstract
In the particular embodiments of the invention disclosed in the specification, a single crystal silicon plate having heavy metal impurities is coated with a layer of amorphous silicon several hundred to several thousand Angstroms thick in a vacuum vessel by a glow discharge at a pressure of 1 to 10 Torr and a temperature of about 200.degree. C. Silane gas is used to form a non-doped layer and about 1% of diborane or phosphine gas may be added to form a p-type or an n-type layer, respectively. The glow discharge is produced by a high frequency voltage applied to electrodes in the vacuum vessel but a direct current discharge may be used initially to provide improved adhesion of the layer. When the plate is heated above the crystallization temperature of the a-Si layer, heavy metal impurities are gettered from the single crystal.