The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1987
Filed:
Feb. 28, 1986
Grzegorz Kaganowicz, Belle Mead, NJ (US);
Alfred C Ipri, Princeton, NJ (US);
Richard S Crandall, Princeton, NJ (US);
RCA Corporation, Princeton, NJ (US);
Abstract
A method for forming a dielectric film over a semiconductor device is disclosed. The body of semiconductor material is formed and a hydrogen-containing silicon nitride material substantially free of silicon-hydrogen bonds is formed thereover. Also disclosed is a semiconductor device, including a body of semiconductor material and a dielectric film thereover. The dielectric film is a hydrogen-containing silicon nitride material substantially free of silicon-to-hydrogen bonds.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile