The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1987
Filed:
Dec. 03, 1985
Hans W Becke, Morristown, NJ (US);
Robert K Smith, New Providence, NJ (US);
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
An improved radial type high voltage solid-state switch is essentially a gated diode switch (GDS) having two anode regions, two gate regions, a common cathode region, and a common shield region. The anodes, gates, cathode, and shield all have sides which are portions of concentric circles. The arc lengths and radii of the anode regions are less than the corresponding arc sides of the shield and cathode. This structure, which is a dual radial gated diode swtich (DRGDS), has lower on resistance than a conventional radial gated diode switch which has the same operating voltage range.