The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1987
Filed:
Sep. 17, 1986
Achim Eyer, Freiburg/Breisgau, DE;
Armin Raeuber, Gundelfingen, DE;
Norbert Schillinger, Ihringen, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
A method for the manufacture of large area silicon crystal bodies suitable for use in the manufacture of solar cells wherein silicon powder having a small grain size is used as the starting material. This powder is compressed to form a thin layer in a suitable form, the form having at least a surface composed of silicon or a silicon compound. The form is filled to a depth approximating the final dimensions of the article. The powder is sintered in the form, and the compressed, sintered layer is converted into a self-supporting silicon foil. This foil is melted partially up to at least half its thickness and recrystallized in a two-stage temperature treatment. The melting occurs by means of a single-sided energy irradiation. The silicon foil is not deteriorated in terms of its mechanical stability and shaped by means of the single-sided, optical type heating. The larger grains which arise in the first melting and recrystallization are used to continue growth over the full layer thickness of the silicon body during the second melting and recrystallization. This produces silicon bodies for solar cells which can be economically manufactured and can be manufactured with high purity and crystal quality.