The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 1987

Filed:

Sep. 03, 1985
Applicant:
Inventors:

Johannes A Appels, Eindhoven, NL;

Henricus G Maas, Eindhoven, NL;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437228 ; 148D / ; 148D / ; 148D / ; 156643 ; 156648 ; 156653 ; 156662 ; 437 31 ; 437 20 ; 437 41 ;
Abstract

For providing semiconductor zones (16, 18, 26) and contact metallization (19, 27) within an opening (9) in a self-registered manner, which opening is provided along its edge with polycrystalline connection parts (10) separated by an insulating material (15) from the metallization (19, 27), a protective layer (11) is formed which is maintained within the opening (9)until within this opening (9) the connection parts (10) are formed by anisotropic etching from a uniform layer of polycrystalline semiconductor material (10). The method is suitable for the manufacture of both bipolar transistors and field effect transistors.


Find Patent Forward Citations

Appels, Johannes. (1987). Method of manufacturing a semiconductor device (U.S. Patent No. 4689872). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4689872

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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