The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1987
Filed:
Sep. 24, 1985
Applicant:
Inventor:
Satwinder D Malhi, Garland, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 40 ; 156643 ; 357 55 ; 148D / ; 148D / ; 437225 ; 437203 ;
Abstract
A current source MOSFET is fabricated by forming a trench (36) in an n++ drain (source) region (32) and extending below the trench (36). A gate oxide layer (40) is disposed on the sidewalls of the trench (36) and a conductive region (38) formed in the bottom of the trench (36). A gate-to-source (gate-to-drain) contact (49) is then formed in the trench (36) and then a drain (source) contact (58) formed. The vertical gate structure defines a vertical channel region on all sides of the trench (36) to allow a wider devive to be fabricated in a smaller overall silicon area.