The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 1987

Filed:

Dec. 20, 1985
Applicant:
Inventors:

Kuppuswamy Raghunathan, Austin, TX (US);

Jeffrey R Jorvig, Chandler, AZ (US);

Stephen L Smith, Tempe, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; H03K / ; H03K / ;
U.S. Cl.
CPC ...
307449 ; 307475 ; 3072 / ; 307585 ; 307264 ;
Abstract

A high voltage CMOS decoder and level translator for use in conjunction with EPROMS and EEPROMS utilizes additional series coupled field effect transistors maintained in an on condition so a to prevent the voltage across the pull-up and pull-down field effect transistors from exceeding their break down voltages. For example, in addition to a pull-up P-channel field effect transistor and a pull-down N-channel field effect transistor in the output inverter circuit, additional P-channel and N-channel field effect transistors are coupled in series between the pull-up and pull-down transistors to maintain the voltage across the pull-up and pull-down transistors from exceeding there breakdown voltages.


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