The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1987
Filed:
Sep. 22, 1986
James W Penney, Thousand Oaks, CA (US);
Rockwell International Corporation, El Segundo, CA (US);
Abstract
A dual deposition liftoff process is provided for obtaining clearly defined, planar integrated circuit pattern definition. After developing a photoresist pattern on a substrate, a thin layer of sealing material which is compatible with the integrated circuit is deposited over the photoresist and the uncovered portions of the substrate. The sidewalls of the photoresist are then etched, thereby undercutting the sealing material and forming a lip which overhangs the sidewalls. A second layer of material is deposited on top of the thin layer to provide the required thickness for the integrated circuit. The overhanging lip protects the sidewalls from deposition and thus a good liftoff of the photoresist with its overlying layers is obtained.