The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1987
Filed:
Mar. 19, 1986
Antonio C Pastor, Santa Monica, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
A method is disclosed for growing thermally unstable ferroelectric materials having the formula MH.sub.2 XO.sub.4, where M is potassium, rubidium, cesium or ammonium; H is hydrogen or deuterium and X is phosphorus or arsenic. The ferroelectric material is heated to melt temperature in a constant volume cylindrical chamber (10) which is moisture-free. Improved crystal formation is accomplished by axially cooling the melt from the bottom end (18) of the chamber by thermal conduction along the chamber longitudinal axis predominantly and only minimally by radial thermal conduction through the sides (16) of the chamber. The axial cooling produces a crystal interface which is flat and perpendicular to the chamber axis and which gradually progresses toward the chamber top to provide uniform growth of a single crystal of ferroelectric material.