The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1987
Filed:
Apr. 22, 1986
Victor J Adams, Tempe, AZ (US);
Carl E Derrington, East Greenbush, NY (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A solid state semiconductor pressure sensor is described in which the pressure sensor element is protected from the ambient whose pressure is being measured by a combination of a pressure transfer medium and a thin covering membrane. A method is described for applying the thin covering membrane so as to substantially avoid entrapment of air or formation of voids in the pressure transfer medium which would degrade the performance of the sensor. The pressure transfer medium is a gel-like material such as a silastic. The membrane is chosen to be substantially impermeable to the ambients being measured and sufficiently flexible to be rolled across the surface of the assembly during fabrication and to avoid attenuation of the input pressure signal. Fluorosilicone is an example of a suitable membrane material.