The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1987
Filed:
Jul. 23, 1986
Applicant:
Inventors:
Sang-Hoon Chai, Daegu, KR;
Jin-Hyo Lee, Qumi, KR;
Assignee:
Electronics and Telecommunication Research Institute, Chungchungnam, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 36 ; 148D / ; 148D / ; 148D / ; 148D / ; 357 34 ; 357 59 ; 156643 ; 156653 ; 437967 ;
Abstract
A method for making a semiconductor device having transistors comprising the active regions which are protected by polysilicon layer during the whole process from damages due to the other processing, that is dry etching, etc. and a minimized base region so as to provide a high operating speed and a minimium size thereof as well as lowest power consumption features.
Chai, Sang-Hoon. (1987). Fabricating semiconductor device with polysilicon protection layer (U.S. Patent No. 4686762). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4686762
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile