The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1987
Filed:
Sep. 12, 1984
Jan A Pals, Eindhoven, NL;
Arend J Klinkhamer, Nijmegen, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
Method of manufacturing a semiconductor device and semiconductor device manufactured by the use of such a method. A method of contacting narrow regions, such as narrow polysilicon gates of a CCD, having widths of, for example, 4 .mu.m. Upper layers, which are required for the CCD electrodes, are used as etching masks for contacts to the lower electrode layers. Two upper layers define two contact openings of 4 .mu.m which are displaced both with respect to each other and with respect to the region to be contacted. Therefore it is possible to define a contact opening which is smaller than 4 .mu.m and which is aligned accurately above the gate to be contacted.