The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 1987

Filed:

Jul. 24, 1985
Applicant:
Inventors:

Syoichi Washizuka, Yokohama, JP;

Masayuki Watanabe, Yokohama, JP;

Sadao Yashiro, Tokyo, JP;

Masae Nakanishi, Chigasaki, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
422249 ; 156607 ; 1566 / ; 156D / ;
Abstract

An apparatus has a crucible for containing a GaAs raw material melt and a B.sub.2 O.sub.3 liquid encapsulating material therein, a heat generator arranged around the crucible so as to be coaxial therewith, and a heat insulator assembly arranged around the heat generator to surround the heat generator and the crucible for the purpose of manufacturing a compound semiconductor single crystal by pulling it from the raw material melt in the crucible by the LEC method. In the heat insulator assembly of the apparatus of the above construction, an upper heat insulator, arranged above the crucible and having at its center a circular hole for receiving the single crystal being pulled, comprises a plurality of radially divided sector-shaped split members. The split members are sintered bodies having aluminum nitride (AlN) as a major constituent.


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