The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1987
Filed:
Jul. 09, 1984
Applicant:
Inventor:
Kenko Taguchi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 13 ; 357 16 ;
Abstract
An avalanche photodiode comprising an uppermost layer of one conductivity type, a second layer of the other conductivity type wherein the electrons or hole having the greater ionization rate are the minority carriers, a third layer of the second type, having a smaller bandgap than the second layer and wherein the electrons or holes having the greater ionization rate are the majority carriers, and a multi-layer heterojunction structure between the second and third layers comprising alternate layers of the second conductivity type having a bandgap as large as the second layer and layers having a bandgap between those of the second and third layers.