The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1987
Filed:
Dec. 02, 1983
Yoshinori Ohta, Kamiina, JP;
Jun-ichi Nishizawa, Komegafukuro, Sendai City, Miyagi Pref., JP;
Olympus Optical Co., Ltd., both of, JP;
Other;
Abstract
A solid state imaging element includes a semiconductor body consisting of a substrate of n.sup.+ conductivity type forming a drain region and of an epitaxial layer of n.sup.- conductivity type. In a surface of the epitaxial layer is a source region of n.sup.+ conductivity type and a signal storage gate region of p.sup.+ conductivity type. A transparent insulating film is provided on the signal storage gate region and on a portion of the surface of the epitaxial layer adjoining the signal storage gate region. A transparent gate electrode is provided on the insulating layer. Photocarriers generated in a depletion layer under the surface portion of the epitaxial layer by a light, which is incident through the transparent gate electrode and the transparent insulating layer, are stored in an inversion layer formed by a given bias voltage applied to the gate electrode.