The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1987
Filed:
Feb. 13, 1986
Applicant:
Inventors:
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; C23F / ;
U.S. Cl.
CPC ...
156632 ; 148D / ; 156650 ; 156652 ; 156655 ; 1566611 ; 437245 ;
Abstract
An improved process for manufacturing a thin film transistor uses two masks for etching and therefore one mask alignment. The technical effect of said process is to provide the thin film transistor with low cost and enhanced yield.
Kishi, Kohhei. (1987). Method of manufacturing thin film transistor (U.S. Patent No. 4684435). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4684435
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile