The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1987
Filed:
Sep. 30, 1985
Hamza Yilmaz, Dewitt, NY (US);
General Electric Company, Research Triangle Park, NC (US);
Abstract
The construction of a semiconductor insulated gate device (IGT) is altered to avoid cell latching problems assisted with 'hot spot' sites where an atypically high density reverse current tends to flow. IGT cells adjacent these sites are totally or partially disabled by eliminating emitter regions therein to thereby remove any emitter-base junctions from the paths along which the high density reverse current flows. Also the area of emitter electrode ohmic contact is increased at these 'hot spot' sites to effectively divert reverse from neighboring, forward current conducting, active cells and thus reduce the density of reverse flow therethrough to safe levels.