The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1987
Filed:
Mar. 06, 1986
Applicant:
Inventors:
Andrew J Purdes, Garland, TX (US);
Gregory C Smith, Garland, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156614 ; 156643 ; 156D / ; 204164 ; 427 39 ;
Abstract
Deposition in an RIE type plasma reactor of interlevel oxide at high power and low pressure yielding a topography similar to reflowed PSG is disclosed. Deposition rates and film purity are limited by purity and the rate of flow of reactant gases through the plasma reactor and not by the thermal conductivity and expansion properties of quartz as in bias sputtering.
Quick Actions:
Purdes, Andrew. (1987). Planarized dielectric deposited using plasma enhanced chemical vapor (U.S. Patent No. 4681653). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4681653
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile