The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 1987

Filed:

Feb. 28, 1985
Applicant:
Inventors:

Robert B Owen, Huntsville, AL (US);

Mary H Johnston, Huntsville, AL (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
356129 ; 356128 ;
Abstract

A system and method for monitoring the state of a crystal (C) which is suspended in a solution is disclosed which includes providing a light source (10) for emitting a beam (12) of light along an optical axis (X). A collimating lens is arranged along the optical axis for collimating the emitted beam to provide a first collimated light beam (16) consisting of parallel light rays. The solution and crystal are contained in a transparent container (18). By passing the first collimated light beam through the container, a number of the parallel light rays are deflected off of the surfaces of said crystal being monitored according to the refractive index gradient to provide a deflected beam (19) of deflected light rays. A focusing lens (22) is arranged along the optical axis for focusing the deflected rays (32, 34, 48, 50) towards a desired focal point (24a). A knife edge (24) is arranged in a predetermined orientation at the focal point; and a screen (26) is provided. A portion (34, 50) of the deflected beam is blocked with the knife edge to project only a portion (32, 48) of the deflected beam (19). A band (38) is created at one edge of the image of the crystal which indicates the state of change of the surface (39a, 39b) of the crystal (C) being monitored.


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