The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1987
Filed:
Jul. 15, 1985
Katsumi Yagi, Osaka, JP;
Sanyo Electric Co., Ltd., , JP;
Abstract
A semiconductor laser includes an active layer (13) for oscillating a laser beam, a first clad layer (12) and a second clad layer (14) stacked to hold the active layer (13), a QW layer (15) stacked on the second clad layer (14) and a diffusion portion (17) formed in the central portion of the QW layer (15) by impurity diffusion. Thickness of the second clad layer (14) is so selected that a beam generated from the active layer (13) can penetrate into the second clad layer (14). The QW layer (15) absorbs the beam generated from the active layer (13), while the diffusion layer (17) in the central portion thereof functions as a non-absorption region with respect to the beam. Thus, implemented is a horizontal optical confinement substantially equivalent to CSP structure.