The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1987
Filed:
Dec. 12, 1985
Amir A Lakhani, Columbia, MD (US);
Laurence C Olver, Columbia, MD (US);
Allied Corporation, Morristown, NJ (US);
Abstract
A method of fabricating a self-aligned field-effect transistor having a T-shaped gate electrode and a sub-micron gate length. In the method of the present invention, a multi-layer gate structure is formed on an active region formed in a semiconductor substrate. A first aluminum layer of the gate structure, which is adjacent to the active region, is selectively etched to form a T-shaped gate electrode. The etching provides the first layer of the gate electrode with a gate length of less than 0.75 microns, and the T-shaped gate electrode is used as a shadow-mask to deposit self-aligned source and drain electrodes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile