The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1987
Filed:
Jun. 18, 1984
Applicant:
Inventor:
Joseph Borel, St. Egreve, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
2957 / ; 29578 ; 29580 ; 2957 / ; 148175 ; 148D / ; 357 49 ;
Abstract
A process for manufacturing isolated semi conductor components in a semi conductor wafer of the type used in bipolar technology. In this process, polycrystalline silicon is deposited in a recess in a silicon substrate whose walls are insulated by a silicon nitride layer except for an opening formed in this nitride layer at the bottom of said recess. Then, the polycrystalline silicon is re-epitaxied so as to become monocrystalline silicon by thermal heating from the 'nucleus' formed by the underlying silicon in said opening.