The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1987
Filed:
May. 16, 1985
John Y Chen, Los Angeles, CA (US);
Richard C Henderson, Westlake Village, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
A high-density MOSFET having field oxide self-aligned channel stops for device isolation and an optimal method of fabricating such a device is described. The process provides channel stops underlying and aligned with the edges of a field oxide layer and allows the dopant concentration of the channel stops to be established separately from that of the active device channel region by use of an independant channel stop implant. The active devices thus formed require minimal isolation area, have a high field threshold voltage, a low junction capacitance, and minimal body effect. They are particularly useful in high-speed, high-performance integrated circuits.