The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1987
Filed:
Dec. 16, 1985
Applicant:
Inventor:
Kotaro Okamoto, Hino, JP;
Assignee:
Hosiden Electronics Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357-2 ; 357 15 ; 357 55 ; 357 63 ; 357 59 ;
Abstract
An impurity-doped amorphous silicon semiconductor layer is deposited on a substrate, source and drain electrodes are deposited apart from each other on the amorphous silicon semiconductor layer in ohmic contact therewith and a gate electrode is deposited on the amorphous silicon semiconductor layer in Schottky contact therewith between the source and drain electrodes, thereby forming a thin film transistor.
Quick Actions:
Okamoto, Kotaro. (1987). Thin film transistor (U.S. Patent No. 4679062). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4679062
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile