The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1987
Filed:
Mar. 21, 1985
Lambertus J Meuleman, Eindhoven, NL;
Adriaan Valster, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A semiconductor laser of the double heterojunction (DH) type having a current-confining buried blocking layer. According to the invention, a high-resistance region having a disturbed crystal structure is present outside and on either side of the strip-shaped active region and extends at least throughout the thickness of the blocking layer. As a result, the lateral leakage currents and the parasitic capacitances are reduced so that the laser can be used at frequencies considerably higher than 1 GHz. The high-resistance region is preferably obtained by protron bombardment. The invention is particularly advantageous in DCPBH lasers for optical communication.