The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1987
Filed:
Sep. 03, 1985
Takao Matsumura, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of capless annealing for an ion implanted substrate of a group III-V compound semiconductor, wherein said ion implanted substrate is placed in an inert ambient with a temperature ranging between 500 to 1000 degrees centigrade and a pressure ranging from 30 to 90 atmospheres, thereby increasing the deep energy level EL 2 concentration in the surface portion of a semiconductor substrate. The resistivity of the compound semiconductor substrate is increased in accordance with the deep energy level EL 2 concentration. This method is conducive to maintenance of the isolation between adjacent semiconductor elements fabricated on the group III-V compound semiconductor substrate.