The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 1987

Filed:

Jul. 15, 1985
Applicant:
Inventor:

Richard T Martin, Goleta, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118720 ; 118721 ; 118504 ; 118505 ;
Abstract

A stabilized mask assembly for direct deposition of a thin film pattern onto a substrate having a dimensionally stabilized mask supporting frame which includes an opening extending therethrough and defining a surface extending circumferentially around the opening, a relatively thin, substantially planar mask having a predetermined yield strength and selected geometrical shape and dimension wherein the mask is positioned adjacent the opening with the periphery of the mask circumferentially contiguous the circumferentially extending surface and wherein the mask has at least one aperture extending therethrough and arranged in a predetermined location defining a thin film pattern, and a securing device for rigidly affixing the periphery of the mask to the circumferentially extending surface with a substantially uniform tension applied to and in the plane of the mask and wherein the tension has a magnitude which establishes a stress on the mask during use which is less than the predetermined yield strength of the mask over a temperature range of a deposition process including operating temperatures of a deposition environment and being adapted to maintain a tension thereon of sufficient magnitude to keep the mask under tension independent of variations in tension due to the thermal expansion characteristics of the mask to dimensionally stabilize the thin film pattern at the operating temperatures of a deposition environment is shown. A method of fabricating a stabilized mask for direct deposition of a thin film pattern onto a substrate is also shown.


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