The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1987
Filed:
Jun. 18, 1984
Joel A Karp, Atherton, CA (US);
Ilbok Lee, Los Altos Hills, CA (US);
Visic, Inc., San Jose, CA (US);
Abstract
There is provided an improved MOS dynamic random access memory (DRAM) device having an array of dynamic RAM cells accessed by word and bit lines. Each memory cell comprises a single field-effect transistor coupled by its source to the gate of an MOS storage capacitor. The word lines are coupled to their respective memory cells at the gate of the field-effect transistor therein, while the bit lines are coupled to their respective memory cells at the drain of the field-effect transistor. The bit lines are organized into pairs of adjacent polysilicon lines that are coupled to all the memory cells on both sides of the bit lines in an alternating configuration. The word lines are coupled to alternating pairs of cells on opposite sides of the word lines.