The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 1987

Filed:

Oct. 09, 1984
Applicant:
Inventors:

Victor Herrero, Somerset, NJ (US);

Leonard W Schaper, West Orange, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 71 ; 357 51 ; 357 45 ; 357 40 ; 357 80 ;
Abstract

The standard silicon wafer of a conventional wafer-scale-integrated assembly is doped to render it highly conductive. Additionally, a conductive layer is formed on the bottom of the wafer. The bottom-side layer forms an easily accessible ground plane of the assembly. Moreover, this layer and the conductive silicon constitute one plate of an advantageous wafer-size decoupling capacitor. A nearly continuous power layer and a relatively thick layer of silicon dioxide on the top side of the assembly form the other elements of the decoupling capacitor. Additionally, the nearly continuous power layer constitutes an effective a-c ground plane for overlying signal lines.


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