The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1987
Filed:
Jul. 01, 1985
Applicant:
Inventor:
J Aiden Higgins, Westlake Village, CA (US);
Assignee:
Rockwell International Corporation, El Segundo, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G11C / ;
U.S. Cl.
CPC ...
357 24 ; 357 15 ; 377 63 ;
Abstract
Thin electrodes are coupled to a resistive film on an active semiconductive layer to form a gapless gate CCD (GGCCD). The active layer is formed ona semi-insulating substrate, and the resistive film is joined to the active layer by a Schottky barrier. The thin electrode coupled to the resistive film induce fringing fields near the surface to provide high speed charge transport and permit the use of a thin active layer.
Higgins, J. (1987). Gapless gate charge coupled device (U.S. Patent No. 4675714). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4675714
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile