The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1987
Filed:
Jul. 31, 1985
Masaru Wada, Takatsuki, JP;
Hirokazu Shimizu, Suita, JP;
Takao Shibutani, Takatsuki, JP;
Kunio Itoh, Uji, JP;
Ken Hamada, Toyonaka, JP;
Iwao Teramoto, Ibaraki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The invention provides a chemical etching method for a semiconductor device, which comprises a step of forming a first layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x<1) having a surface (100), a step of forming on the first layer a second layer of Ga.sub.1-y Al.sub.y As (0.ltoreq.y<1) having a surface (100), and a step of chemically etching the layers from a level above the second layer and along the direction of <011>. The slope angle of etch face of the second layer depends on the mol fraction y of the second layer, and the slope angle of etch face of the first layer depends on the mol fraction y of the second layer and the mol fraction x of the first layer. These facts are best utilized in the invention so that the etch profile of the first layer may have a desired slope angle. By utilizing this chemical etching method it is possible to produce by chemical etching a semiconductor laser having a flat cavity facet perpendicular to a junction; it is also possible to provide an inner stripe type semiconductor laser having grooves whose side walls are perpendicular.