The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1987
Filed:
Jun. 25, 1986
Reid S Bennett, Wappingers Falls, NY (US);
Linda M Ephrath, LaGrange, NY (US);
Geraldine C Schwartz, Poughkeepsie, NY (US);
Gary S Selwyn, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Laser induced fluorescence is utilized to detect and control the reactive ion etch-through of a given layer in a wafer by detecting a large change in the concentration of a selected minor species from the wafer in the etching plasma. This selected minor species must be present in a significantly different concentration in the etched given layer compared to adjacent layers in the wafer in order to provide a proper endpoint detection. In one embodiment, when the large change in the selected minor species concentration is detected, then the RF electrodes for the reactor are automatically de-energized.