The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1987
Filed:
Dec. 30, 1985
Applicant:
Inventors:
Shoji Ariizumi, Tokyo, JP;
Makoto Segawa, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 71 ; 357 239 ; 357 41 ; 357 51 ; 357 59 ;
Abstract
A semiconductor device having a pair of wiring layers connected in parallel with each other in which a first wiring layer is formed over a semiconductor substrate through a insulation layer. The first wiring layer is made of poly-Si and has relatively high resistivity. Therefore a second wiring layer is formed over the first wiring layer through an insulation layer. A portion of the second wiring layer has low conductivity and is parallel connected to the first wiring layer in order to reduce the resistivity of the wiring layer. Another portion of the second wiring layer has low conductivity and is used as resistive means.