The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1987
Filed:
Oct. 24, 1980
Hugh C Nicolay, Melbourne Village, FL (US);
William G Lucas, Indian Harbor Beach, FL (US);
Harris Corporation, Melbourne, FL (US);
Abstract
V-shaped lateral dielectric isolation grooves divide a semiconductor layer into a plurality of regions. The oxide layer above the polycrystalline material in the grooves is thicker than the field oxide layer on the semiconductor layer to prevent the creation of retrograde surface profiles and mask the polycrystalline material during self-aligned device fabrication in the semiconductor layer. The field oxide is formed on the semiconductor layer before the isolation groove fabrication and prevented from increasing in thickness by an oxide inhibiting layer during the isolation groove fabrication.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile