The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1987
Filed:
Jan. 07, 1986
Matsushita Electric Industrial Co. Ltd., Osaka, JP;
Abstract
A solid-state image sensor is formed of the combination of a semiconductor substrate having a charge transfer function and a photoconductive film. In this solid-state image sensor, blooming suppressing capability is greatly increased by controlling the following potentials to fixed potentials, that is, (1) the potential of a transparent electrode formed on the photoconductive film, (2) the channel potential of a MOS field-effect transistor formed of a charge transfer stage and a gate electrode which are formed together with a Si diode in the semiconductor substrate in which the diode is electrically connected to the photoconductive film, and (3) the barrier potential of the charge transfer stage.