The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 1987

Filed:

Apr. 18, 1986
Applicant:
Inventor:

Manouchehr E Motamedi, Thousand Oaks, CA (US);

Assignee:

Rockwell International Corporation, El Segundo, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 29580 ; 2961 / ; 7351 / ; 73720 ; 73726 ; 156647 ; 156653 ; 156657 ; 1566591 ; 156662 ; 338-2 ; 338 47 ; 357 26 ; 357 55 ;
Abstract

A monolithic accelerometer is fabricated with an integral cantilever beam sensing element which is etched out of a silicon wafer from the back surface. A thermal silicon oxide is formed on both surfaces of a (100) silicon wafer. Silicon oxide is removed from the back surface in a pattern which defines the sides of the cantilever beam and the sides of an alignment groove. The width and orientation of the openings in the silicon oxide are selected to control the depth of etching when the wafer is subsequently etched with an anisotropic etchant. An integrated circuit is then formed on the front surface and dry etching is used to complete the groove and separate the sides of the beam from the wafer.


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