The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1987
Filed:
Apr. 10, 1985
Applicant:
Inventors:
Steven R Schachameyer, Whitefish Bay, WI (US);
James A Benjamin, Waukesha, WI (US);
John B Pardee, Milwaukee, WI (US);
Lyle O Hoppie, Birmingham, MI (US);
Assignee:
Eaton Corporation, Cleveland, OH (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B01J / ;
U.S. Cl.
CPC ...
148-15 ; 2957 / ; 2957 / ; 148175 ; 148187 ; 148D / ; 427 38 ; 427 531 ;
Abstract
A semiconductor ion implantation processing technique is disclosed for implanting high purity, high flux density ions in a semiconductor wafer substrate. A reactant gas is irradiated with excimer pulsed ultraviolet laser radiation at a discrete designated pulsed wavelength corresponding to a discrete designated ionization excitation energy of the gas photochemically breaking bonds of the gas to nonthermally photolytically ionize the gas. The ions are then accelerated by an electric field for subsequent implantation into a surface.