The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1987
Filed:
Apr. 10, 1985
Steven R Schachameyer, Whitefish Bay, WI (US);
James A Benjamin, Waukesha, WI (US);
John B Pardee, Milwaukee, WI (US);
Lyle O Hoppie, Birmingham, MI (US);
Herman P Schutten, Milwaukee, WI (US);
Eaton Corporation, Cleveland, OH (US);
Abstract
A dopant gettering semiconductor processing technique is disclosed for selectively activating an otherwise benign reactant to remove dopant from a semiconductor wafer substrate. Excimer pulsed ultraviolet laser radiation is provided at a discrete designated pulsed wavelength corresponding to a discrete designated gettering excitation energy of the otherwise benign reactant photochemically breaking bonds of the reactant such that the reactant is photolytically activated to remove dopant from the substrate, without thermally driven pyrolytic reaction. The bonds of a reactant gas are photochemically broken to produce gettering agents reacting with the substrate to remove dopant by forming a gaseous compound liberated from the substrate and benign to and unactivated by the discrete designated wavelength of the excimer pulsed ultraviolet laser radiation.