The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 1987
Filed:
Dec. 20, 1985
Applicant:
Inventors:
Silvo Stanojevic, Milpitas, CA (US);
Bernard D Miller, San Jose, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H / ;
U.S. Cl.
CPC ...
361103 ; 361 87 ; 361 93 ;
Abstract
An IC thermal shutdown circuit is based upon the thermal characteristics of a reverse biased PN junction diode. The leakage current, at bias levels below breakdown, is closely related to the high temperature IC performance limit. A hysteresis introducing circuit produces reliable switching at predetermined levels to shut down the IC when the maximum temperature limit is reached.