The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1987
Filed:
Jan. 15, 1985
Applicant:
Inventor:
Lance A Glasser, Lexington, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365114 ; 365184 ; 365182 ; 357 236 ;
Abstract
A programmable non-volatile memory cell is disclosed that can be written into the '1,' '0,' or 'previous' state in the presence of unfocused illumination, preferrably ultraviolet (UV) light. The programmed state is controlled by low electrical voltages. Once the illumination is removed the programmed state is non-volatile. The memory cell can be fabricated using conventional MOS processing techniques with no additional mask steps. The cell can thus be implemented on virtually all silicon gate nMOS and CMOS processes.