Edge passivated charge-coupled device image sensor

Abstract

A charge-coupled device (CCD) image sensor includes in a substrate of single crystalline silicon of one conductivity type an array of a plurality of spaced, parallel channel regions of the opposite conductivity type extending along one major surface of the substrate. A plurality of parallel conductive gates are over the one major surface of the substrate and extend transversely across the channel regions. The outermost channel regions of the array are positioned adjacent edges of the substrate so that a plurality of the image sensors can be mounted in edge-to-edge relation with the channel regions of the various sensors being close together. The sensor includes passivating means between each outermost channel region and the adjacent edge to prevent charge carriers generated by the edge from being injected into the outermost channel region. The passivating means includes a highly conductive drain region of a conductivity type opposite to that of the substrate within the substrate and extending along the one major surface between the outermost channel region and the edge. Also, a highly conductive region of the same conductivity type as the substrate is on the substrate and extends along the one major surface directly at the edge.