The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1987
Filed:
Mar. 11, 1986
Chih Sah, Urbana, IL (US);
Li-Jen Cheng, La Crescenta, CA (US);
Abstract
Front surface contact floating emitter solar cell 'transistors' having a semiconductor body (n-type) and floating emitter sections (p-type) diffused or implanted in the front surface are provided with sections diffused or implanted in the front surface between the floating emitter sections, but isolated from the floating emitter sections, for use either as a base contact to the n-type semiconductor body, in which case the section is doped n.sup.+, or as a collector for the adjacent emitter sections, in which case the section is doped p.sup.+. In the first case, the structure is provided with p.sup.+ semiconductor material on the back to serve as a collector, and in the second case with n.sup.+ semiconductor material on the back to serve as a base contact. In either case, the semiconductor material on the back may be a starting substrate of suitably doped semiconductor material. In the case of the substrate being the collector, a groove is etched to isolate the collector junctions from saw damage on the edge. Using ion implantation techniques, floating emitter solar cell 'transistor' structures may be fabricated in an implanted well (n-type for p-n-p transistors) to obviate the need for a groove.