The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1987
Filed:
Jul. 16, 1985
Richard Falckenberg, Wald, DE;
Josef Grabmaier, Berg, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
A method for horizontal silicon tape drawing is provided which can be practiced at a high drawing speed. The carrier member uses parallel threads of a material having a higher emission factor .epsilon. than the emission factor of molten silicon and such threads serve as crystallization nucleators for silicon. A silicon melt tank is used which has a length l that is at least as long as the contacting length existing between the surface of molten silicon and the horizontally moving threads so that L=V.sub.z .multidot.t where v.sub.z is the drawing speed and t is the dwell time. The drawing direction d.sub.z is set inclined at an angle .alpha..ltoreq. 10.degree. relative to the horizontal. Radiant losses from the silicon melt surface are regulated by reflectors. The method provides the possibility of manufacturing tape-shaped silicon crystals 16 for solar cells with a constant thickness and width.