The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1987
Filed:
Dec. 19, 1985
Moriya Nakahara, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A polycrystalline silicon layer is formed on a surface of a gate oxide film on a silicon substrate. A mask is formed on a prospective gate region of the polycrystalline silicon layer. Nitrogen is ion-implanted using the mask into a portion of the polycrystalline silicon layer excluding the prospective gate region. In addition, an impurity for forming source and drain regions is ion-implanted into portions of the substrate. The ion-implanted nitrogen is then annealed to convert the portion of the substrate in which nitrogen has been ion-implanted into an electrically insulating layer. The portion in which no nitrogen has been ion-implanted functions as a gate electrode. An upper portion of the polycrystalline silicon layer is etched using the mask before the nitrogen is annealed. Thus, the upper surfaces of the insulating layer and the gate electrode can be level with each other after annealing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile