The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1987
Filed:
Jul. 01, 1985
Mark S Ebel, Los Altos, CA (US);
Silicon Macrosystems Incorporated, San Jose, CA (US);
Abstract
A high speed EPROM cell comprises two floating gate field effect transistors and one field effect transistor. One of the floating gate transistors is smaller than the other floating gate transistor and functions as a programming transistor in developing charge on the interconnected floating gates. The larger dimensions of the other floating gate transistor allows increased read current and operating speed. The field effect transistor connects the larger floating gate transistor to a read drain terminal. The cell is readily fabricated using two doped polycrystalline semiconductor lines and two metallization lines in accordance with conventional semiconductor processing techniques.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile