The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1987
Filed:
Apr. 01, 1985
Applicant:
Inventors:
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 2957 / ; 148174 ; 148D / ; 156612 ; 156643 ; 156653 ; 156657 ; 427 85 ; 427 86 ; 427 87 ;
Abstract
A method for the prevention of dopant diffusion from the back side of a doped semiconductor substrate during epitaxial layer growth. The entire surface of the substrate is first covered with a cleanly etchable material. Around the entire first layer is formed a second dopant diffusion barrier layer. The front sides of the layers are then selectively etched away to expose the front side of the substrate upon which the epitaxial layer will be grown without contamination of dopant diffusion from the sealed back side of the substrate.
Roth, Scott. (1987). Method for prevention of autodoping of epitaxial layers (U.S. Patent No. 4662956). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4662956
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile