The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1987
Filed:
Jan. 28, 1986
David A Collins, San Diego, CA (US);
Derek L Lile, Ft. Collins, CO (US);
The United States of America as represented by the Department of the Navy, Washington, DC (US);
Abstract
A process for forming low resistance ohmic contacts on indium phosphide (InP) avoids the usual problem of high temperature annealing. The method comprises passing a current between two contacts of a suitably chosen metallic conductor that is doped so as to be the same conductivity type as the underlining semiconductor. Passage of the current causes the contacts to combine with the semiconductor via field assisted thermal diffusion.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile